Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity

Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity

This study focuses on developing low-power, highly sensitive AlGaN/GaN pressure sensors for harsh environmental conditions, utilizing Au-free fabrication techniques to enable the integration of a readout-circuit on the same chip. For this purpose, a variation of membrane and device design is fabrica...

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Bibliographic Details
Main Authors: Matthias Moser, Mamta Pradhan, Ikram Ul Haq Emal, Satabdi Bastia, Mathias Kaschel, Kevin Edelmann, Ingmar Kallfass, Joachim N. Burghartz
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
Pressure sensor
Strain sensing
MEMS
Harsh environment
AlGaN/GaN HEMT
High Electron Mobility Transistor
Online Access:http://www.sciencedirect.com/science/article/pii/S277237042500001X

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http://www.sciencedirect.com/science/article/pii/S277237042500001X

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