CVD growth of high speed SiGe HBTs using SiH4
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated. The results showed that the growth rate of SiGe layers has a stron...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2000-12-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/32 |