Stability of SiN<sub>x</sub> Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature
In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond s...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/12/3363 |