Stability of SiN<sub>x</sub> Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Stability of SiN<sub>x</sub> Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond s...

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Bibliographic Details
Main Authors:	Chi Zhang, Majiaqi Wu, Pengchang Wang, Maoliang Jian, Jianhua Zhang, Lianqiao Yang
Format:	Article
Language:	English
Published:	MDPI AG 2021-12-01
Series:	Nanomaterials
Subjects:	SiN<sub>x</sub> plasma-enhanced chemical vapor deposition physical stability thin-film encapsulation
Online Access:	https://www.mdpi.com/2079-4991/11/12/3363

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