Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation

Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation

Atomic layer deposition (ALD) has been proven to be a versatile method for the deposition of thin films of various materials. It yields films with exceptional conformality and allows tunable film compositions with control of film thickness at the atomic level. Thin films of Al oxide, nitride, and ox...

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Bibliographic Details
Main Authors: Abu Talha Aqueel Ahmed, Afina faza Hafiyyan, Nurhidayati Nurhidayati, Fani Rahayu Hidayah Rayanisaputri, Khuloud A. Alibrahim, Shubhangi S. Khadtare, Shofiur Rahman, Abdullah N. Alodhayb, Nurul Taufiqu Rochman, Abu Saad Ansari
Format: Article
Language:English
Published: AIP Publishing LLC 2024-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0190183

Internet

http://dx.doi.org/10.1063/5.0190183

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