The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer
A high aluminum (Al) content <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained <i>β</i>-(Al<sub>x<...
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MDPI AG
2023-03-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/7/2775 |
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| author | Wenhui Zhang Hezhi Zhang Song Zhang Zishi Wang Litao Liu Qi Zhang Xibing Hu Hongwei Liang |
| author_facet | Wenhui Zhang Hezhi Zhang Song Zhang Zishi Wang Litao Liu Qi Zhang Xibing Hu Hongwei Liang |
| author_sort | Wenhui Zhang |
| collection | DOAJ |
| description | A high aluminum (Al) content <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film had an average thickness of 750 nm and a surface roughness of 2.10 nm. Secondary ion mass spectrometry results indicated the homogenous distribution of Al components in the film. The Al compositions in the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, as estimated by X-ray diffraction, were close to those estimated by X-ray photoelectron spectroscopy, at ~62% and ~61.5%, respectively. The bandgap of the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, extracted from the O 1s core-level spectra, was approximately 6.0 ± 0.1 eV. After synthesizing the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, a thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> film was further deposited on sapphire substrate using carbothermal reduction and halide vapor phase epitaxy. The <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film, grown on a sapphire substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> buffer layer, exhibited improved crystal orientation along the (-201) plane. Moreover, the scanning electron microscopy revealed that the surface quality of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film on sapphire substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer was significantly improved, with an obvious transition from grain island-like morphology to 2D continuous growth, and a reduction in surface roughness to less than 10 nm. |
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| institution | Directory Open Access Journal |
| issn | 1996-1944 |
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| spelling | doaj.art-acef929fed2b43dabff3d0203ba727d42023-11-17T17:04:55ZengMDPI AGMaterials1996-19442023-03-01167277510.3390/ma16072775The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer LayerWenhui Zhang0Hezhi Zhang1Song Zhang2Zishi Wang3Litao Liu4Qi Zhang5Xibing Hu6Hongwei Liang7School of Microeletronics, Dalian University of Technology, Dalian 116024, ChinaSchool of Microeletronics, Dalian University of Technology, Dalian 116024, ChinaThe 46th Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, ChinaSchool of Microeletronics, Dalian University of Technology, Dalian 116024, ChinaSchool of Microeletronics, Dalian University of Technology, Dalian 116024, ChinaJiangsu Xinguanglian Technology Company Co., Ltd., Wuxi 214192, ChinaJiangsu Xinguanglian Technology Company Co., Ltd., Wuxi 214192, ChinaSchool of Microeletronics, Dalian University of Technology, Dalian 116024, ChinaA high aluminum (Al) content <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film had an average thickness of 750 nm and a surface roughness of 2.10 nm. Secondary ion mass spectrometry results indicated the homogenous distribution of Al components in the film. The Al compositions in the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, as estimated by X-ray diffraction, were close to those estimated by X-ray photoelectron spectroscopy, at ~62% and ~61.5%, respectively. The bandgap of the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, extracted from the O 1s core-level spectra, was approximately 6.0 ± 0.1 eV. After synthesizing the <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> film, a thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> film was further deposited on sapphire substrate using carbothermal reduction and halide vapor phase epitaxy. The <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film, grown on a sapphire substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> buffer layer, exhibited improved crystal orientation along the (-201) plane. Moreover, the scanning electron microscopy revealed that the surface quality of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film on sapphire substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer was significantly improved, with an obvious transition from grain island-like morphology to 2D continuous growth, and a reduction in surface roughness to less than 10 nm.https://www.mdpi.com/1996-1944/16/7/2775<i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> buffer layer<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick filmheteroepitaxy |
| spellingShingle | Wenhui Zhang Hezhi Zhang Song Zhang Zishi Wang Litao Liu Qi Zhang Xibing Hu Hongwei Liang The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer Materials <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> buffer layer <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film heteroepitaxy |
| title | The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer |
| title_full | The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer |
| title_fullStr | The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer |
| title_full_unstemmed | The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer |
| title_short | The Heteroepitaxy of Thick <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Film on Sapphire Substrate with a <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Intermediate Buffer Layer |
| title_sort | heteroepitaxy of thick i β i ga sub 2 sub o sub 3 sub film on sapphire substrate with a i β i al sub x sub ga sub 1 x sub sub 2 sub o sub 3 sub intermediate buffer layer |
| topic | <i>β</i>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> buffer layer <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thick film heteroepitaxy |
| url | https://www.mdpi.com/1996-1944/16/7/2775 |
| work_keys_str_mv | AT wenhuizhang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT hezhizhang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT songzhang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT zishiwang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT litaoliu theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT qizhang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT xibinghu theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT hongweiliang theheteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT wenhuizhang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT hezhizhang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT songzhang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT zishiwang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT litaoliu heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT qizhang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT xibinghu heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer AT hongweiliang heteroepitaxyofthickibigasub2subosub3subfilmonsapphiresubstratewithaibialsubxsubgasub1xsubsub2subosub3subintermediatebufferlayer |