Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection
The developments in the nascent field of artificial-intelligence-of-things (AIoT) relies heavily on the availability of high-quality multi-dimensional data. A huge amount of data is being collected in this era of big data, predominantly for AI/ML algorithms and emerging applications. Considering suc...
Главные авторы: | Musaib Rafiq, Yogesh Singh Chauhan, Shubham Sahay |
---|---|
Формат: | Статья |
Язык: | English |
Опубликовано: |
IEEE
2024-01-01
|
Серии: | IEEE Journal of the Electron Devices Society |
Предметы: | |
Online-ссылка: | https://ieeexplore.ieee.org/document/10563982/ |
Схожие документы
-
Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET
по: Myoungsu Son, и др.
Опубликовано: (2023-01-01) -
The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FinFET
по: Wen-Qi Zhang, и др.
Опубликовано: (2023-04-01) -
A method to simulate multivariate outliers with known mahalanobis distances for normal and non-normal data
по: Oscar L. Olvera Astivia
Опубликовано: (2024-12-01) -
Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions
по: Chunguang Wang, и др.
Опубликовано: (2024-01-01) -
Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
по: Eunah Ko, и др.
Опубликовано: (2017-01-01)