Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a plat...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
De Gruyter
2018-06-01
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Series: | Reviews on Advanced Materials Science |
Online Access: | https://doi.org/10.1515/rams-2018-0049 |