Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first order quantum correction term is considered in the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8981987/ |