Si‐Based Dual‐Gate Field‐Effect Transistor Array for Low‐Power On‐Chip Trainable Hardware Neural Networks
Herein, dual‐gate field‐effect transistors (DG FETs) fabricated on Si substrate and a corresponding NOR‐type array designed for low‐power on‐chip trainable hardware neural networks (HNNs) are presented. The fabricated DG FET exhibits notable endurance characteristics, with the subthreshold swing rem...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley
2024-01-01
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Series: | Advanced Intelligent Systems |
Subjects: | |
Online Access: | https://doi.org/10.1002/aisy.202300490 |