Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications
Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN HEMTs are a promising technology solution for implementing RF power amplifiers in 5G front-end modules. These devices, however, might suffer from current collapse due to trapping effects, leading to compressed ou...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-12-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/12/2244 |