Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN HEMTs are a promising technology solution for implementing RF power amplifiers in 5G front-end modules. These devices, however, might suffer from current collapse due to trapping effects, leading to compressed ou...

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Bibliographic Details
Main Authors:	Nicolò Zagni, Giovanni Verzellesi, Alessandro Chini
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Series:	Micromachines
Subjects:	GaN HEMTs 5G current collapse T-independent process Fe doping TCAD simulations
Online Access:	https://www.mdpi.com/2072-666X/13/12/2244

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