Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

High-quality pseudo-vertical p–n diodes using a GaN-on-silicon heterostructure are reported. An optimized fabrication process including a beveled deep mesa as edge termination and reduced ohmic contact resistances enabled high on-state current density and low on-resistance. A uniform breakdown volta...

Full description

Bibliographic Details
Main Authors: Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, Farid Medjdoub
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Applied Physics Express
Subjects:
vertical GaN
power
p–n diode
Online Access:https://doi.org/10.35848/1882-0786/ad106c

Internet

https://doi.org/10.35848/1882-0786/ad106c

Similar Items