Engineering ZnO with Cu doping to lower the transition pressure: Experimental and theoretical investigations
Zinc Oxide (ZnO) is an n-type wide bandgap semiconductor. Doping of different elements in ZnO potentially affects its structural, optical and electronic properties. We have carried out high pressure angle dispersive x-ray diffraction and Raman scattering studies on Zn0.99Cu0.01O. We observed the sub...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0132933 |