Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received incr...

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Bibliographic Details
Main Authors: Raquel Rodriguez-Lamas, Dolors Pla, Odette Chaix-Pluchery, Benjamin Meunier, Fabrice Wilhelm, Andrei Rogalev, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, Hervé Roussel, Michel Boudard, Carmen Jiménez, Mónica Burriel
Format: Article
Language:English
Published: Beilstein-Institut 2019-02-01
Series:Beilstein Journal of Nanotechnology
Subjects:
manganite
metal organic chemical vapour deposition (MOCVD)
resistive switching
thin film
valence-change memory
Online Access:https://doi.org/10.3762/bjnano.10.38

Internet

https://doi.org/10.3762/bjnano.10.38

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