Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors
The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current (<inline-formula> <tex-math notation="LaTeX">$I_{\mathrm {G}}$ </tex-math></inline-formula>), HCI prob...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10041127/ |