Field-free magnetization reversal by spin-Hall effect and exchange bias

Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitat...

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Bibliographic Details
Main Authors: A. van den Brink, G. Vermijs, A. Solignac, J. Koo, J. T. Kohlhepp, H. J. M. Swagten, B. Koopmans
Format: Article
Language:English
Published: Nature Portfolio 2016-03-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms10854