Field-free magnetization reversal by spin-Hall effect and exchange bias
Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2016-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms10854 |
| _version_ | 1818419818065297408 |
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| author | A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans |
| author_facet | A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans |
| author_sort | A. van den Brink |
| collection | DOAJ |
| description | Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitations. |
| first_indexed | 2024-12-14T12:44:36Z |
| format | Article |
| id | doaj.art-addeb55889eb4abe91dbe941002fd3cf |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-14T12:44:36Z |
| publishDate | 2016-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-addeb55889eb4abe91dbe941002fd3cf2022-12-21T23:00:49ZengNature PortfolioNature Communications2041-17232016-03-01711610.1038/ncomms10854Field-free magnetization reversal by spin-Hall effect and exchange biasA. van den Brink0G. Vermijs1A. Solignac2J. Koo3J. T. Kohlhepp4H. J. M. Swagten5B. Koopmans6Eindhoven University of TechnologyEindhoven University of TechnologyEindhoven University of TechnologyEindhoven University of TechnologyEindhoven University of TechnologyEindhoven University of TechnologyEindhoven University of TechnologyFuture information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitations.https://doi.org/10.1038/ncomms10854 |
| spellingShingle | A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans Field-free magnetization reversal by spin-Hall effect and exchange bias Nature Communications |
| title | Field-free magnetization reversal by spin-Hall effect and exchange bias |
| title_full | Field-free magnetization reversal by spin-Hall effect and exchange bias |
| title_fullStr | Field-free magnetization reversal by spin-Hall effect and exchange bias |
| title_full_unstemmed | Field-free magnetization reversal by spin-Hall effect and exchange bias |
| title_short | Field-free magnetization reversal by spin-Hall effect and exchange bias |
| title_sort | field free magnetization reversal by spin hall effect and exchange bias |
| url | https://doi.org/10.1038/ncomms10854 |
| work_keys_str_mv | AT avandenbrink fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT gvermijs fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT asolignac fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT jkoo fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT jtkohlhepp fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT hjmswagten fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT bkoopmans fieldfreemagnetizationreversalbyspinhalleffectandexchangebias |