Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

The effect of a transparent conductive oxide (TCO) buffer layer on the insulator matrix and on the resistive switching process in the metal/TiO _2 /TCO/metal assembly was studied depending on the material of the TCO (ITO-(In _2 O _3 ) _0.9 (SnO _2 ) _0.1 or SnO _2 or ZnO). For the first time electro...

Full description

Bibliographic Details
Main Authors: E O Filatova, A P Baraban, A S Konashuk, M A Konyushenko, A A Selivanov, A A Sokolov, F Schaefers, V E Drozd
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
Subjects:
resistive switching
transparent-conductive-oxide
NEXAFS
I–V characteristics
oxygen vacancies
buffer layer
Online Access:https://doi.org/10.1088/1367-2630/16/11/113014

Internet

https://doi.org/10.1088/1367-2630/16/11/113014

Similar Items