Kinetic Monte Carlo model for homoepitaxial growth of Ga_{2}O_{3}

Kinetic Monte Carlo model for homoepitaxial growth of Ga_{2}O_{3}

We developed a kinetic Monte Carlo (KMC) model for the homoepitaxy of β-Ga_{2}O_{3}. It comprises adsorption, diffusion, and desorption and reflects the structure of β-Ga_{2}O_{3} with its two kinds of atoms: Ga and O. The knowledge gained from metal organic vapour phase experiments (MOVPE) experime...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों: Wolfram Miller, Dennis Meiling, Robert Schewski, Andreas Popp, Saud Bin Anooz, Martin Albrecht
स्वरूप: लेख
भाषा:English
प्रकाशित: American Physical Society 2020-07-01
श्रृंखला:Physical Review Research
ऑनलाइन पहुंच:http://doi.org/10.1103/PhysRevResearch.2.033170

इंटरनेट

http://doi.org/10.1103/PhysRevResearch.2.033170

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