Single Event Effect Analysis of SiGe Low Noise Amplifier
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations w...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Banja Luka
2021-12-01
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| Series: | Electronics |
| Online Access: | https://els-journal.net/?page_id=327 |