Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width
The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-vol...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IOP Publishing
2020-01-01
|
Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/ab6c1c |