Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width
The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-vol...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab6c1c |
| _version_ | 1797746964406730752 |
|---|---|
| author | E Omotoso A T Paradzah E Igumbor B A Taleatu W E Meyer F D Auret |
| author_facet | E Omotoso A T Paradzah E Igumbor B A Taleatu W E Meyer F D Auret |
| author_sort | E Omotoso |
| collection | DOAJ |
| description | The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-voltage ( C-V ), conventional and Laplace deep level transient spectroscopy. The rectification quality of Schottky contacts before and after irradiation was confirmed by I-V and C-V results. The ideality factor and doping density were determined to be in the range of 1.23 to 1.46 and 3.55 × 10 ^15 to 5.25 × 10 ^15 cm ^−3 , respectively before and after irradiating the device with alpha-particles. The thermal emission activation energy and the apparent capture cross section of the E-center were determined from the Arrhenius plot to be 0.37 eV and 1.3 × 10 ^−15 cm ^2 , respectively. The capture barrier energyand the true capture cross section of the E-center were calculated to be 0.052 eV and 2.25 × 10 ^−17 cm ^2 , respectively from the experimental findings after varying the pulse width at different temperature range from 145 to 180 K in steps of 5 K. |
| first_indexed | 2024-03-12T15:44:20Z |
| format | Article |
| id | doaj.art-ae599fc2fa524cbfa8955b0a7b1f6e2d |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:44:20Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-ae599fc2fa524cbfa8955b0a7b1f6e2d2023-08-09T15:31:58ZengIOP PublishingMaterials Research Express2053-15912020-01-017202590110.1088/2053-1591/ab6c1cDetermination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse widthE Omotoso0https://orcid.org/0000-0002-0485-5845A T Paradzah1https://orcid.org/0000-0002-4200-8567E Igumbor2https://orcid.org/0000-0002-8171-8318B A Taleatu3https://orcid.org/0000-0001-7022-6118W E Meyer4https://orcid.org/0000-0002-7584-0034F D Auret5Department of Physics and Engineering Physics, Obafemi Awolowo University , Ile-Ife, 220005, Nigeria; Department of Physics, University of Pretoria , Private Bag X20, Hatfield 0028, South AfricaDepartment of Physics, University of Pretoria , Private Bag X20, Hatfield 0028, South AfricaCollege of Science, Engineering and Technology, University of South Africa , Preller Street, Muckleneuk Ridge, Pretoria 003, South AfricaDepartment of Physics and Engineering Physics, Obafemi Awolowo University , Ile-Ife, 220005, NigeriaDepartment of Physics, University of Pretoria , Private Bag X20, Hatfield 0028, South AfricaDepartment of Physics, University of Pretoria , Private Bag X20, Hatfield 0028, South AfricaThe capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-voltage ( C-V ), conventional and Laplace deep level transient spectroscopy. The rectification quality of Schottky contacts before and after irradiation was confirmed by I-V and C-V results. The ideality factor and doping density were determined to be in the range of 1.23 to 1.46 and 3.55 × 10 ^15 to 5.25 × 10 ^15 cm ^−3 , respectively before and after irradiating the device with alpha-particles. The thermal emission activation energy and the apparent capture cross section of the E-center were determined from the Arrhenius plot to be 0.37 eV and 1.3 × 10 ^−15 cm ^2 , respectively. The capture barrier energyand the true capture cross section of the E-center were calculated to be 0.052 eV and 2.25 × 10 ^−17 cm ^2 , respectively from the experimental findings after varying the pulse width at different temperature range from 145 to 180 K in steps of 5 K.https://doi.org/10.1088/2053-1591/ab6c1cgermaniumDLTScapture barrier energyalpha particle irradiationpulse width |
| spellingShingle | E Omotoso A T Paradzah E Igumbor B A Taleatu W E Meyer F D Auret Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width Materials Research Express germanium DLTS capture barrier energy alpha particle irradiation pulse width |
| title | Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width |
| title_full | Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width |
| title_fullStr | Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width |
| title_full_unstemmed | Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width |
| title_short | Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width |
| title_sort | determination of capture barrier energy of the e center in palladium schottky barrier diodes of antimony doped germanium by varying the pulse width |
| topic | germanium DLTS capture barrier energy alpha particle irradiation pulse width |
| url | https://doi.org/10.1088/2053-1591/ab6c1c |
| work_keys_str_mv | AT eomotoso determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth AT atparadzah determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth AT eigumbor determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth AT bataleatu determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth AT wemeyer determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth AT fdauret determinationofcapturebarrierenergyoftheecenterinpalladiumschottkybarrierdiodesofantimonydopedgermaniumbyvaryingthepulsewidth |