Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-vol...

Full description

Bibliographic Details
Main Authors: E Omotoso, A T Paradzah, E Igumbor, B A Taleatu, W E Meyer, F D Auret
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
germanium
DLTS
capture barrier energy
alpha particle irradiation
pulse width
Online Access:https://doi.org/10.1088/2053-1591/ab6c1c

Similar Items

Similar Items