Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system
In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetic...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | fas |
| Published: |
Isfahan University of Technology
2012-12-01
|
| Series: | Journal of Advanced Materials in Engineering |
| Subjects: | |
| Online Access: | http://jame.iut.ac.ir/article-1-543-en.html |