Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system
In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetic...
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| Format: | Article |
| Language: | fas |
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Isfahan University of Technology
2012-12-01
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| Series: | Journal of Advanced Materials in Engineering |
| Subjects: | |
| Online Access: | http://jame.iut.ac.ir/article-1-543-en.html |
| _version_ | 1818916096121503744 |
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| author | A. Salmasi E. Keshavarz Alamdari |
| author_facet | A. Salmasi E. Keshavarz Alamdari |
| author_sort | A. Salmasi |
| collection | DOAJ |
| description | In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetics of this process was investigated at different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography and chemical concentrations were studied by Ellipsometry, XXPS, AFM and ADP. Our analyses of the performed experiments indicated that at the temperatures between 730 ᐤC and 830 ᐤC, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured H2 contamination in a-SiNx thin films is 1.05 at%, which is 17 times lower than the corresponding contamination in the films produced by PECVD and 3.4 times lower than the contamination in the LPCVD thin films with SiH4 or DCS and NH3. The created surface topography of the prepared films is smooth and uniform. |
| first_indexed | 2024-12-20T00:12:44Z |
| format | Article |
| id | doaj.art-ae8db599799749e08d0660697b7e4a04 |
| institution | Directory Open Access Journal |
| issn | 2251-600X 2423-5733 |
| language | fas |
| last_indexed | 2024-12-20T00:12:44Z |
| publishDate | 2012-12-01 |
| publisher | Isfahan University of Technology |
| record_format | Article |
| series | Journal of Advanced Materials in Engineering |
| spelling | doaj.art-ae8db599799749e08d0660697b7e4a042022-12-21T20:00:27ZfasIsfahan University of TechnologyJournal of Advanced Materials in Engineering2251-600X2423-57332012-12-013125363Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous systemA. Salmasi0E. Keshavarz Alamdari1 Nanotechnology and Advanced Materials Department, Materials and Energy Research Center, Karaj, Iran. Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran, Iran. In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetics of this process was investigated at different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography and chemical concentrations were studied by Ellipsometry, XXPS, AFM and ADP. Our analyses of the performed experiments indicated that at the temperatures between 730 ᐤC and 830 ᐤC, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured H2 contamination in a-SiNx thin films is 1.05 at%, which is 17 times lower than the corresponding contamination in the films produced by PECVD and 3.4 times lower than the contamination in the LPCVD thin films with SiH4 or DCS and NH3. The created surface topography of the prepared films is smooth and uniform.http://jame.iut.ac.ir/article-1-543-en.htmlgaseous free radicalspt-ir/al2o3 catalysta-sinxtcslpcvd. |
| spellingShingle | A. Salmasi E. Keshavarz Alamdari Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system Journal of Advanced Materials in Engineering gaseous free radicals pt-ir/al2o3 catalyst a-sinx tcs lpcvd. |
| title | Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system |
| title_full | Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system |
| title_fullStr | Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system |
| title_full_unstemmed | Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system |
| title_short | Characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition Using free radicals of trichlorosilane and ammonia gaseous system |
| title_sort | characterization of amorphous silicon nitride thin films deposited by low pressure chemical vapor deposition using free radicals of trichlorosilane and ammonia gaseous system |
| topic | gaseous free radicals pt-ir/al2o3 catalyst a-sinx tcs lpcvd. |
| url | http://jame.iut.ac.ir/article-1-543-en.html |
| work_keys_str_mv | AT asalmasi characterizationofamorphoussiliconnitridethinfilmsdepositedbylowpressurechemicalvapordepositionusingfreeradicalsoftrichlorosilaneandammoniagaseoussystem AT ekeshavarzalamdari characterizationofamorphoussiliconnitridethinfilmsdepositedbylowpressurechemicalvapordepositionusingfreeradicalsoftrichlorosilaneandammoniagaseoussystem |