Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Abstract The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusi...

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Bibliographic Details
Main Authors: Artem Musiienko, Fengjiu Yang, Thomas William Gries, Chiara Frasca, Dennis Friedrich, Amran Al-Ashouri, Elifnaz Sağlamkaya, Felix Lang, Danny Kojda, Yi-Teng Huang, Valerio Stacchini, Robert L. Z. Hoye, Mahshid Ahmadi, Andrii Kanak, Antonio Abate
Format: Article
Language:English
Published: Nature Portfolio 2024-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-44418-1

Internet

https://doi.org/10.1038/s41467-023-44418-1

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