Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors

Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors

SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both potential device applications, the crystal lattic...

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Bibliographic Details
Main Authors: Takashi Matsuoka, Hitoshi Morioka, Satoshi Semboshi, Yukihiko Okada, Kazuya Yamamura, Shigeyuki Kuboya, Hiroshi Okamoto, Tsuguo Fukuda
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
ScAlMgO<sub>4</sub>
SCAM
GaN
nitride semiconductor
thermal expansion coefficient
transmittance
Online Access:https://www.mdpi.com/2073-4352/13/3/449

Internet

https://www.mdpi.com/2073-4352/13/3/449

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