Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors
SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both potential device applications, the crystal lattic...
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| Format: | Article |
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MDPI AG
2023-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/3/449 |
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| author | Takashi Matsuoka Hitoshi Morioka Satoshi Semboshi Yukihiko Okada Kazuya Yamamura Shigeyuki Kuboya Hiroshi Okamoto Tsuguo Fukuda |
| author_facet | Takashi Matsuoka Hitoshi Morioka Satoshi Semboshi Yukihiko Okada Kazuya Yamamura Shigeyuki Kuboya Hiroshi Okamoto Tsuguo Fukuda |
| author_sort | Takashi Matsuoka |
| collection | DOAJ |
| description | SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both potential device applications, the crystal lattice and optical properties of SCAM substrates were investigated on selected high quality samples. As lattice parameters, the thermal expansion coefficient as well as the lattice constant were extrapolated from room temperature to 2000 °C by using a high temperature X-ray diffraction (XRD) system with the heating unit on a sample stage. The thermal conductance, which is also important for growing bulk SCAM crystals and the operation of devices on the SCAM substrate, was measured. Raman scattering measurements were carried out to better understand crystal lattice characteristics. It was clearly confirmed that prepared SCAM crystals were of high quality. Similar to sapphire, SCAM has the high transparency over the wide wavelength range from ultraviolet to mid-infrared. The refractive index, important for the design of any optical devices, was measured. From these results, it can be said that SCAM is a suitable substrate for nitride devices, especially LEDs and solar cells. |
| first_indexed | 2024-03-11T06:43:01Z |
| format | Article |
| id | doaj.art-aea72186abb94bf49665e614cff2230a |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T06:43:01Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-aea72186abb94bf49665e614cff2230a2023-11-17T10:28:56ZengMDPI AGCrystals2073-43522023-03-0113344910.3390/cryst13030449Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride SemiconductorsTakashi Matsuoka0Hitoshi Morioka1Satoshi Semboshi2Yukihiko Okada3Kazuya Yamamura4Shigeyuki Kuboya5Hiroshi Okamoto6Tsuguo Fukuda7New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, JapanApplication Department, X-ray Division, Bruker Japan K.K., Yokohama 221-0022, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanDepartment of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, JapanDepartment of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanGraduate School of Science and Technology, Hirosaki University, Hirosaki 036-8224, JapanFukuda Crystal Laboratory, Sendai 989-3204, JapanSCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both potential device applications, the crystal lattice and optical properties of SCAM substrates were investigated on selected high quality samples. As lattice parameters, the thermal expansion coefficient as well as the lattice constant were extrapolated from room temperature to 2000 °C by using a high temperature X-ray diffraction (XRD) system with the heating unit on a sample stage. The thermal conductance, which is also important for growing bulk SCAM crystals and the operation of devices on the SCAM substrate, was measured. Raman scattering measurements were carried out to better understand crystal lattice characteristics. It was clearly confirmed that prepared SCAM crystals were of high quality. Similar to sapphire, SCAM has the high transparency over the wide wavelength range from ultraviolet to mid-infrared. The refractive index, important for the design of any optical devices, was measured. From these results, it can be said that SCAM is a suitable substrate for nitride devices, especially LEDs and solar cells.https://www.mdpi.com/2073-4352/13/3/449ScAlMgO<sub>4</sub>SCAMGaNnitride semiconductorthermal expansion coefficienttransmittance |
| spellingShingle | Takashi Matsuoka Hitoshi Morioka Satoshi Semboshi Yukihiko Okada Kazuya Yamamura Shigeyuki Kuboya Hiroshi Okamoto Tsuguo Fukuda Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors Crystals ScAlMgO<sub>4</sub> SCAM GaN nitride semiconductor thermal expansion coefficient transmittance |
| title | Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors |
| title_full | Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors |
| title_fullStr | Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors |
| title_full_unstemmed | Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors |
| title_short | Properties of ScAlMgO<sub>4</sub> as Substrate for Nitride Semiconductors |
| title_sort | properties of scalmgo sub 4 sub as substrate for nitride semiconductors |
| topic | ScAlMgO<sub>4</sub> SCAM GaN nitride semiconductor thermal expansion coefficient transmittance |
| url | https://www.mdpi.com/2073-4352/13/3/449 |
| work_keys_str_mv | AT takashimatsuoka propertiesofscalmgosub4subassubstratefornitridesemiconductors AT hitoshimorioka propertiesofscalmgosub4subassubstratefornitridesemiconductors AT satoshisemboshi propertiesofscalmgosub4subassubstratefornitridesemiconductors AT yukihikookada propertiesofscalmgosub4subassubstratefornitridesemiconductors AT kazuyayamamura propertiesofscalmgosub4subassubstratefornitridesemiconductors AT shigeyukikuboya propertiesofscalmgosub4subassubstratefornitridesemiconductors AT hiroshiokamoto propertiesofscalmgosub4subassubstratefornitridesemiconductors AT tsuguofukuda propertiesofscalmgosub4subassubstratefornitridesemiconductors |