Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mis...

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Bibliographic Details
Main Authors: Liliia Dvoretckaia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, Georgy Cirlin
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
molecular beam epitaxy
nanowires
III-N
Si
microsphere lithography
light-emitting devices
Online Access:https://www.mdpi.com/2079-4991/12/12/1993

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https://www.mdpi.com/2079-4991/12/12/1993

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