Impact of Low-Variability SOTB Process on Ultra-Low-Voltage Operation of 1 Million Logic Gates

In this study, we demonstrate near-0.1 V minimum operating voltage of a low-variability Silicon on Thin Buried Oxide (SOTB) process for one million logic gates on silicon. Low process variability is required to obtain higher energy efficiency during ultra-low-voltage operation with steeper subthresh...

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Bibliographic Details
Main Authors: Yasuhiro Ogasahara, Tadashi Nakagawa, Toshihiro Sekigawa, Toshiyuki Tsutsumi, Hanpei Koike
Format: Article
Language:English
Published: MDPI AG 2015-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Online Access:http://www.mdpi.com/2079-9268/5/2/116