Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual‐material gate‐oxide‐stack double‐gate TFET
Abstract This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material gate‐oxide‐stack double‐gate tunnel...
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| Format: | Article |
| Language: | English |
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Hindawi-IET
2021-09-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | https://doi.org/10.1049/cds2.12049 |