Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic pl...

Full description

Bibliographic Details
Main Authors: Hui Wan, Bin Tang, Ning Li, Shengjun Zhou, Chengqun Gui, Sheng Liu
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Nanomaterials
Subjects:
GaN-based UV LED
wet chemical etching
prism-structured sidewall
crystal orientation
light extraction
Online Access:http://www.mdpi.com/2079-4991/9/3/365

Internet

http://www.mdpi.com/2079-4991/9/3/365

Similar Items