High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric
In this paper, hydrogen terminated metal oxide semiconductor field effect transistors (MOSFETs) having a sub-micron gate length were fabricated on a single crystalline diamond sample using the 300 °C ALD grown Al2O3 as gate dielectric and passivation layer. The device shows a maximum output current...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-06-01
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Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723003108 |