High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric
In this paper, hydrogen terminated metal oxide semiconductor field effect transistors (MOSFETs) having a sub-micron gate length were fabricated on a single crystalline diamond sample using the 300 °C ALD grown Al2O3 as gate dielectric and passivation layer. The device shows a maximum output current...
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| Format: | Article |
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Elsevier
2023-06-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723003108 |
| _version_ | 1797814363453652992 |
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| author | Zeyang Ren Yuanchen Ma Shiqi Yang Xinxin Yu Jinfeng Zhang Kai Su Jincheng Zhang Hanxue Wang Yue Hao |
| author_facet | Zeyang Ren Yuanchen Ma Shiqi Yang Xinxin Yu Jinfeng Zhang Kai Su Jincheng Zhang Hanxue Wang Yue Hao |
| author_sort | Zeyang Ren |
| collection | DOAJ |
| description | In this paper, hydrogen terminated metal oxide semiconductor field effect transistors (MOSFETs) having a sub-micron gate length were fabricated on a single crystalline diamond sample using the 300 °C ALD grown Al2O3 as gate dielectric and passivation layer. The device shows a maximum output current density of 942 mA/mm and a lowest on-resistance of 6.2 Ω·mm at a VGS of −3 V. A maximum transconductance of 284 mS/mm was achieved. In addition, a high cut-off frequency of 41.3 GHz and a maximum oscillation frequency of 80.6 GHz were achieved. These are the highest values among the reported H-diamond MOSFETs with high temperature (>200 °C) grown dielectrics. The hole mobility is estimated to be 138 cm2/Vs at VGS = -3 V. The high carrier mobility contributes to the achievement of the high output current density. These results demonstrate that the high temperature grown Al2O3 dielectric has also a great potential to be used in high frequency H-diamond MOSFETs. |
| first_indexed | 2024-03-13T08:06:36Z |
| format | Article |
| id | doaj.art-af28064f3ebe47a9b304b49241f39d78 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-13T08:06:36Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
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| series | Results in Physics |
| spelling | doaj.art-af28064f3ebe47a9b304b49241f39d782023-06-01T04:35:51ZengElsevierResults in Physics2211-37972023-06-0149106517High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectricZeyang Ren0Yuanchen Ma1Shiqi Yang2Xinxin Yu3Jinfeng Zhang4Kai Su5Jincheng Zhang6Hanxue Wang7Yue Hao8State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China; Xidian-Wuhu Research Institute, Wuhu 241002, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China; Xidian-Wuhu Research Institute, Wuhu 241002, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaCETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China; Corresponding authors.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China; Xidian-Wuhu Research Institute, Wuhu 241002, China; Corresponding authors.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China; Corresponding authors.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, hydrogen terminated metal oxide semiconductor field effect transistors (MOSFETs) having a sub-micron gate length were fabricated on a single crystalline diamond sample using the 300 °C ALD grown Al2O3 as gate dielectric and passivation layer. The device shows a maximum output current density of 942 mA/mm and a lowest on-resistance of 6.2 Ω·mm at a VGS of −3 V. A maximum transconductance of 284 mS/mm was achieved. In addition, a high cut-off frequency of 41.3 GHz and a maximum oscillation frequency of 80.6 GHz were achieved. These are the highest values among the reported H-diamond MOSFETs with high temperature (>200 °C) grown dielectrics. The hole mobility is estimated to be 138 cm2/Vs at VGS = -3 V. The high carrier mobility contributes to the achievement of the high output current density. These results demonstrate that the high temperature grown Al2O3 dielectric has also a great potential to be used in high frequency H-diamond MOSFETs.http://www.sciencedirect.com/science/article/pii/S2211379723003108DiamondAl2O3MOSFETHigh frequency |
| spellingShingle | Zeyang Ren Yuanchen Ma Shiqi Yang Xinxin Yu Jinfeng Zhang Kai Su Jincheng Zhang Hanxue Wang Yue Hao High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric Results in Physics Diamond Al2O3 MOSFET High frequency |
| title | High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric |
| title_full | High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric |
| title_fullStr | High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric |
| title_full_unstemmed | High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric |
| title_short | High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric |
| title_sort | high frequency single crystalline diamond mosfet with high temperature 300 °c ald grown al2o3 dielectric |
| topic | Diamond Al2O3 MOSFET High frequency |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723003108 |
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