High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric

High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric

In this paper, hydrogen terminated metal oxide semiconductor field effect transistors (MOSFETs) having a sub-micron gate length were fabricated on a single crystalline diamond sample using the 300 °C ALD grown Al2O3 as gate dielectric and passivation layer. The device shows a maximum output current...

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Bibliographic Details
Main Authors: Zeyang Ren, Yuanchen Ma, Shiqi Yang, Xinxin Yu, Jinfeng Zhang, Kai Su, Jincheng Zhang, Hanxue Wang, Yue Hao
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Results in Physics
Subjects:
Diamond
Al2O3
MOSFET
High frequency
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723003108

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