Dynamic Flash Memory with fast block refresh feature using double storage gates and one select gate
This paper proposes a Dynamic Flash Memory (DFM) (Sakui and Harada, 2020; 2021 [1,2]) with double storage gates and one select gate based on FinFET and Surrounding Gate Transistor (SGT) (Takato et al., 1988 [3]) architectures. Like DRAM (Dennard, 1967 [4]), refresh is required, but fast block refres...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-10-01
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| Series: | Memories - Materials, Devices, Circuits and Systems |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064622000044 |