Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles
Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various size...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-08-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/7/8/231 |