Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy

For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing bas...

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Bibliographic Details
Main Authors: V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-07-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
III-nitrides
LED
solid solutions
AIIIBV
Online Access:http://journal-spqeo.org.ua/n2_2017/P254-258abstr.html

Internet

http://journal-spqeo.org.ua/n2_2017/P254-258abstr.html

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