Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics<sub/><italic/>
Gate dielectric engineering is crucial to enable two-dimensional (2D) transition metal dichalcogenides (TMDs) for logic transistor applications. In this work, we demonstrate a uniform and pinhole-free bilayer high-κ fabricated on monolayer (1L) molybdenum disulfide (MoS2) through thermal...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9955311/ |