Al back-gated graphene field-effect transistors for capacitive sensing applications based on quantum capacitance effect
We report a new device design of a graphene field-effect transistor (G-FET) for capacitive sensing application. A channel area exposed to ambient conditions in G-FET is known to be a promising candidate for molecular level sensing applications because graphene can attract certain molecules with its...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0101754 |