In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films
Ga2O3 possesses an ultra-wide bandgap (∼4.9 eV) and an extremely large breakdown field strength (∼8 MV/cm), which promises extraordinary application potential in power electronics and ultraviolet optoelectronics. With the demand for highly durable devices in harsh environments such as in low earth o...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-09-01
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| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127522005664 |