A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication com...

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Bibliographic Details
Main Authors: Marco Boccarossa, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace, Marina Antoniou
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
SiC MOSFET
superjunction
semi-superjunction
trench etching
sidewall implantation
tilted trench
Online Access:https://www.mdpi.com/2072-666X/16/2/188

Internet

https://www.mdpi.com/2072-666X/16/2/188

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