A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication com...

Повний опис

Бібліографічні деталі
Автори: Marco Boccarossa, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace, Marina Antoniou
Формат: Стаття
Мова:English
Опубліковано: MDPI AG 2025-02-01
Серія:Micromachines
Предмети:
SiC MOSFET
superjunction
semi-superjunction
trench etching
sidewall implantation
tilted trench
Онлайн доступ:https://www.mdpi.com/2072-666X/16/2/188

Інтернет

https://www.mdpi.com/2072-666X/16/2/188

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