Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect
An analytical Subthreshold Swing (SS) model is presented to observe the change in the SS when a stacked SiO2-metal-ferroelectric structure is used as the oxide film of a JunctionLess Double Gate (JLDG) MOSFET. The SS of 60 mV/dec or less is essential to reduce power dissipation while maintaining tr...
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| Format: | Article |
| Language: | English |
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IIUM Press, International Islamic University Malaysia
2023-01-01
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| Series: | International Islamic University Malaysia Engineering Journal |
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| Online Access: | https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/2508 |