Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

The synergistic effects on the 0.18 µm PPD CISs induced by neutron displacement damage and gamma ionization damage are investigated. The typical characterizations of the CISs induced by the neutron displacement damage and gamma ionization damage are presented separately. The CISs are irradiated by r...

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Bibliographic Details
Main Authors: Zu-Jun Wang, Yuan-Yuan Xue, Ning Tang, Gang Huang, Xu Nie, Shan-Kun Lai, Bao-Ping He, Wu-Ying Ma, Jiang-Kun Sheng, Shi-Long Gou
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Sensors
Subjects:
CMOS image sensor (CIS)
dark signal
dark signal non-uniformity (DSNU)
displacement damage
gamma ray
neutron
Online Access:https://www.mdpi.com/1424-8220/24/5/1441

Internet

https://www.mdpi.com/1424-8220/24/5/1441

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