In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

<p>Abstract</p> <p>Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of t...

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Bibliographic Details
Main Authors: Sanduijav B, Matei DG, Springholz G
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum dots
Silicon
Germanium
Molecular beam epitaxy
Patterned substrates
Reflection high-energy electron diffraction
Scanning tunneling microscopy
Online Access:http://dx.doi.org/10.1007/s11671-010-9814-8

Internet

http://dx.doi.org/10.1007/s11671-010-9814-8

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