Microstrip Array Ring FETs with 2D p-Ga<sub>2</sub>O<sub>3</sub> Channels Grown by MOCVD

Microstrip Array Ring FETs with 2D p-Ga<sub>2</sub>O<sub>3</sub> Channels Grown by MOCVD

Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH<sub>4</sub>) as ga...

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Bibliographic Details
Main Authors: Manijeh Razeghi, Junhee Lee, Lakshay Gautam, Jean-Pierre Leburton, Ferechteh H. Teherani, Pedram Khalili Amiri, Vinayak P. Dravid, Dimitris Pavlidis
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Photonics
Subjects:
MOCVD
p-type
Ga<sub>2</sub>O<sub>3</sub>
thin films
Online Access:https://www.mdpi.com/2304-6732/8/12/578

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https://www.mdpi.com/2304-6732/8/12/578

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