Structural properties of graded In x Ga As metamorphic buffer layers for quantum dots emitting in the telecom bands

Structural properties of graded In x Ga As metamorphic buffer layers for quantum dots emitting in the telecom bands

In recent years, there has been a significant increase in interest in tuning the emission wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing silica fiber networks. In this work, we develop and explore compositionally graded In _x Ga $_{1-x}$ As metamorphic buff...

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Bibliographic Details
Main Authors: Bianca Scaparra, Akhil Ajay, Pavel S Avdienko, Yuyang Xue, Hubert Riedl, Paul Kohl, Björn Jonas, Beatrice Costa, Elise Sirotti, Paul Schmiedeke, Viviana Villafañe, Ian D Sharp, Eugenio Zallo, Gregor Koblmüller, Jonathan J Finley, Kai Müller
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials for Quantum Technology
Subjects:
quantum dots
molecular beam epitaxy
compositionally graded layers
telecommunication spectral range
Online Access:https://doi.org/10.1088/2633-4356/aced32

Internet

https://doi.org/10.1088/2633-4356/aced32

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