High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the...

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Bibliographic Details
Main Authors: Yinchang Ma, Yuan Yan, Linqu Luo, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue, Xixiang Zhang
Format: Article
Language:English
Published: Nature Portfolio 2023-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-43628-x

Internet

https://doi.org/10.1038/s41467-023-43628-x

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